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| DATA SHEET 2N6530 2N6531 2N6532 2N6533 NPN POWER TRANSISTOR TO-220 CASE DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N6530 Series are NPN silicon Darlington transistors designed for power applications requiring extremely high gain. MAXIMUM RATINGS: (TC=25C unless otherwise noted) Collector-Base Voltage Collector-Emitter Voltage Collector-Emitter Voltage Collector-Emitter Voltage Emitter-Base Voltage Continuous Collector Current Peak Collector Current Power Dissipation Operating and Storage Junction Temperature Thermal Resistance SYMBOL VCBO VCER VCEV VCEO VEBO IC ICM PD TJ,Tstg JC 2N6530 80 80 80 80 2N6531 100 100 100 100 2N6532 100 100 100 100 5.0 8.0 15 65 2N6533 120 120 120 120 UNITS V V V V V A A W C C/W -65 to +150 1.92 ELECTRICAL CHARACTERISTICS: (TC=25C unless otherwise noted) 2N6530 2N6531 2N6532 SYMBOL TEST CONDITIONS MIN MAX MIN MAX MIN MAX ICEO ICEV ICEV IEBO BVCER BVCEO BVCEV VCE(SAT) VCE(SAT) VCE(SAT) VBE(ON) VBE(ON) VBE(ON) VCE=Rated VCEO VCE=Rated VCEV, VEB=1.5V VCE=Rated VCEV, VEB=5.0V, TC=125C VEB=5.0V IC=200mA, RBE=100 IC=200mA IC=200mA, VEB=1.5V IC=3.0A, IB=6.0mA IC=5.0A, IB=10mA IC=8.0A, IB=80mA VCE=3.0V, IC=3.0A VCE=3.0V, IC=5.0A VCE=3.0V, IC=8.0A 80 80 80 2.0 3.0 2.8 4.5 1.0 0.5 5.0 5.0 100 100 100 3.0 3.0 2.8 4.5 2.0 3.0 2.8 4.5 1.0 0.5 5.0 5.0 100 100 100 1.0 0.5 5.0 5.0 2N6533 MIN MAX 1.0 0.5 5.0 5.0 120 120 120 2.0 3.0 2.8 4.5 UNITS mA mA mA mA V V V V V V V V V (CONTINUED ON REVERSE SIDE) R0 2N6530 SERIES ELECTRICAL CHARACTERISTICS (Continued) SYMBOL hFE hFE hFE VF hfe |hfe| Cob IS/b ES/b NPN POWER TRANSISTOR TEST CONDITIONS 2N6530 MIN MAX 10K 5K 2.8 2N6531 MIN MAX 500 100 1K 20 10K 5K 2.8 2N6532 MIN MAX 1K 100 1K 20 10K 5K 2.8 2N6533 MIN MAX 1K 100 1K 20 10K 5K 2.8 UNITS VCE=3.0V, IC=3.0A VCE=3.0V, IC=5.0A 1K VCE=3.0V, IC=8.0A 100 IC=10A VCE=5.0V, IC=1.0A, f=1.0kHz 1K VCE=5.0V, IC=1.0A, f=1.0MHz 20 VCB=10V, IE=0, f=1.0MHz VCE=24V, t=0.5s nonrep. 2.7 VEB=1.5V, IC=4.5A, 120 RBE=100, L=12mH V 200 2.7 120 200 2.7 120 200 2.7 120 200 pF A mJ JEDEC TO-220 CASE - MECHANICAL OUTLINE A B G H I E F SYMBOL A B C D E F (DIA) G H I J K L M DIMENSIONS INCHES MILLIMETERS MIN MAX MIN MAX 0.176 0.190 4.48 4.82 0.045 0.055 1.15 1.39 0.014 0.026 0.35 0.65 0.083 0.106 2.10 2.70 0.394 0.417 10.01 10.60 0.140 0.157 3.55 4.00 0.100 0.118 2.54 3.00 0.230 0.270 5.85 6.85 0.560 0.625 14.23 15.87 0.250 6.35 0.025 0.038 0.64 0.96 0.500 0.579 12.70 14.70 0.090 0.110 2.29 2.79 TO-220 (REV: R1) 123 J C L K D M R1 Lead Code: 1) Base 2) Collector 3) Emitter 2N6530 SERIES NPN POWER TRANSISTOR SAFE OPERATING AREA (TC=25C) 100 COLLCECTOR CURRENT - I C (A) 10 IC (MAX) - DC 5ms 1ms 10s 50s 1 0.1 1 VCEO (MAX) = 80V (2N6530) VCEO (MAX) = 100V (2N6531, 2N6532) VCEO (MAX) = 120V (2N6533) 10 100 1000 COLLECTOR-EMITTER VOLTAGE - VCE (V) This datasheet has been download from: www..com Datasheets for electronics components. |
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